step growth meaning in Chinese
阶梯式生长
阶梯状生长
Examples
- The synthesized gan nano structures by the two steps growth pattern are hexagonal single crystal gan . the photoluminescence ( pl ) properties of the formed one - dimensional gan nano structures gained at room temperature revealed nicer results
用两步生长模式合成的一维gan纳米结构为高质量的六方单晶gan ，在室温下测得了良好的光致发光ol ）特性。 - In this thesis , the cvd technique and “ two - step growth process ” were used to deposit the 3c - sic films , that was to carbonize si substrate in carbide gas atmosphere first in order to form a buffer layer , then deposited the 3c - sic films on this buffer layer
本论文采用cvd方法,并结合“两步生长工艺”进行3c - sic的异质外延生长。即:首先将si基片碳化,形成一个碳化缓冲层,然后再在此缓冲层上异质外延生长3c - sic薄膜。 - In this paper , we have successfully synthesized high purity one - dimensional gan nano structures and high quality gan crystal films with novel and simple two steps growth pattern . the composition , the structure and the photoluminescence properties of the fabricated products were analyzed in detail . the growth mechanism of two steps growth pattern were primarily discussed
本文采用简单、新颖的两步生长模式，在不同衬底上合成了高纯的一维gan纳米结构和高质量的gan晶体膜，详细地分析了合成产物的组分、结构和光致发光特性，初步提出并探讨了两步生长模式合成一维gan纳米结构的摘要生长机制，总结了影响一维gan纳米结构和gan晶体膜生长的主要规律和因素。 - The high resolution transmission electron microscopy ( hrtem ) and energy - dispersive x - ray ( edx ) suggested that the two steps growth pattern overcame the shortcomings of templet - confined reaction mechanism , catalytic reaction growth based on vapor - liquid - solid ( vls ) mechanism and oxide - assisted growth mechanism , which would introduce contaminates unintentionally
高分辨电镜（ hrtem ）和能谱分析（ edx ）说明合成的gan纳米材料纯度非常高。两步生长模式克服了模板限制工艺、基于vls机制的催化生长工艺和氧化辅助生长工艺无法避免引入杂质的缺点，有助于一维高纯gan纳米结构光电特性的研究。 - A different approach , named " two step growth approach " has been applied to fabricate an 8x8 photodiode array in the first time . the micro - processing procedures of this photodiode array including standard photolithography , a number of metallisation , wet - chemical etching and sic2 deposition for insulation were developed in this study
首次采用“两步法”制备出了新颖的8 8zns肖特基光电二极管阵列，详细研究并确定了制备该器件的标准光刻、金属沉积、湿化学腐蚀、 sio _ 2绝缘层沉积等一系列微电子处理工艺。